Data for reference potin-mrssp-468-323The Atomic Structure of the {10&onebar;10} Inversion Domains in GaN/Sapphire Layers
V. Potin, P. Ruterana, G. Nouet, A. Salvador, H. Morkoç
Materials Research Society Symposium Proceedings 468, 323 (1997).
Below is the abstract submitted to the meeting, not the abstract of the published paper:
batch #95
This paper is part of Gallium Nitride and Related Materials II
Contributed by Materials Research Society
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