leszczynski-mrssp-468-311

Data for reference leszczynski-mrssp-468-311

Influence of Free Charge on the Lattice Parameters of GaN and Other Semiconductors

M. Leszczynski, J. Ba˛k-Misiuk, J. Domagana, T. Suski

Materials Research Society Symposium Proceedings 468, 311 (1997).

Below is the abstract submitted to the meeting, not the abstract of the published paper:
The lattice parameters of semiconductors depend on the concentration of free electrons via the deformation potentials of the occupied minima of the conduction bands. For GaAs and AlGaAs a number of papers dealt with that problem, including in-situ measurements in which lattice parameters were changed by illumination and temperature variation (inducing different occupation of the conduction-band minima in AlGaAs). In the presented work we examined the lattice parameters of variously doped GaN samples (epitaxial layers on sapphire and on SiC, homoepitaxial layers and bulk crystals grown at high hydrostatic pressure). The following dopants were used: Si, Ge, Mg, and O. The measurements were performed using high resolution X-ray diffractometry. The results indicate that free electrons expand the lattice what confirms a negative value of the deformation potential of the Γ minimum of the conduction band. The significance of the work will be discussed in terms of the influence of strains on the properties of a semiconductor. It is particularly important for the strained heteroepitaxial layers. In this work we separate various factors influencing the lattice parameters: lattice mismatch, thermal strain, size effect and above-mentioned electronic effect.

This paper is part of Gallium Nitride and Related Materials II

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