chen-mrssp-468-31

Data for reference chen-mrssp-468-31

Growth of Ternary Silicon Carbon Nitride as a New Wide Bandgap Material

L.C. Chen, C.K. Chen, D.M. Bhusari, K.H. Chen, S.L. Wei, Y.F. Chen, Y.C. Jong, D.Y. Lin, C.F. Li, Y.S. Huang

Materials Research Society Symposium Proceedings 468, 31 (1997).

Below is the abstract submitted to the meeting, not the abstract of the published paper:
Synthesis of a hypothetical crystalline carbon nitride (c-CN) has attracted significant interest recently. However, growth of pure c-CN with crystal sizes large enough to enable measurement of its properties has not been achieved so far. We report here that incorporation of silicon in the growth of CN can promote formation of large (> 10μm), well faceted crystallites. Crystalline thin films of Si-containing CN have been grown by microwave plasma-enhanced chemical vapor deposition, using CH4, NH₃, and SiH₄gases. X-ray photoelectron spectroscopy (XPS), Auger electron spectroscopy (AES), and electron microscopies (both SEM and TEM) have been employed to characterize the bonding configuration, the composition, and the structure of the films. The new crystalline ternary compound (C;Si)_xN_y consists of a predominantly CN network wherein the Si is believed to substitute some of the C sites. While the N content of the compound is about 50%, the extent of Si substitution varies from crystal to crystal. In some crystals, the Si content can be as low as 5%. Optical properties of the SiCN compounds have been studied by photoluminescence (PL) and contactless electroreflectance (CER) spectroscopies. From the CER measurement, we determine the direct bandgap of the new crystals. It is found that the compounds have a strong sub-bandgap emission centered around 2.8 eV at room temperature, which can be attributed to the effect of defects containing in the crystals.

This paper is part of Gallium Nitride and Related Materials II

Contributed by Materials Research Society

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