Photoluminescence of Strain-Engineered MBE-Grown GaN and InGaN Quantum-Well Structures

Materials Research Society Symposium Proceedings 468, 299 (1997).

The paper describes the influence of strain on the optical quality of GaN films grown by MBE on c-plane sapphire. The photoluminescence (PL) line width of the donor-bound exciton can be designed to be as narrow as 1.2 meV by actively utilizing hydrostatic and biaxial stress components. Unstrained p-type Mg-doped GaN films exhibit comparably narrow near band edge transitions. A sharp PL line at 3.261 eV in some of our films is identified as the donor bound exciton of the cubic phase. The formation of these cubic inclusions can be stimulated by a high III/V flux ratio at the growth temperature of T = 725°ree;C. The PL spectrum of an InGaN multi quantum well structure is significantly broadened compared with the spectra of single quantum well structures. Combination of PL and TEM indicates that this effect relates to a progressive increase of the quantum well widths and their spacing along the growth direction. It is argued that strain affects the growth rate and the incorporation of Indium into the quantum well structures.

This paper is part of Gallium Nitride and Related Materials II

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This item cites the following items in the database:

1. On p-type doping in GaN - acceptor binding energies
2. Observation of resonant Raman lines during the photoluminescence of doped GaN
3. Identification of optical transitions in cubic and hexagonal GaN by spatially resolved cathodoluminescence
4. Optical absorption near the band edge in GaN grown by metalorganic chemical-vapor deposition

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