ruvimov-mrssp-468-287

Data for reference ruvimov-mrssp-468-287

TEM/HREM Analysis of Defects in GaN Epitaxial Layers Grown by MOVPE on SiC and Sapphire

S. Ruvimov, Z. Liliental-Weber, C. Dieker, J. Washburn, M. Koike, H. Amano, I. Akasaki

Materials Research Society Symposium Proceedings 468, 287 (1997).

Below is the abstract submitted to the meeting, not the abstract of the published paper:
Transmission electron microscopy and high resolution electron microscopy have been applied to study defects in epitaxial GaN layers grown by MOCVD on SiC and sapphire substrates. Effect of substrate type and orientation, presence of buffer layer and doping of GaN layer on its structural quality was the focus of present study. Dislocations, stacking faults and micropipes in GaN were systematically studied for updoped, Si- and Mg-doped samples. The structural quality of GaN layers was found to increase with doping in agreement with x-ray diffraction and PL measurements. Annealing of the samples was shown to lead to cracking of the GaN layer in the case of SiC substrate, while crack formation was not detected in the layers grown on sapphire. Mechanisms of defect generation are discussed with respect to the initial growth stages, effect of doping and type of substrate.

This paper is part of Gallium Nitride and Related Materials II

Contributed by Materials Research Society

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