Materials Research Society Symposium Proceedings 468, 281 (1997).
Below is the abstract submitted to the meeting, not the abstract of the published paper:
The III-nitrides have recently been the subject of intense research because of their promising application in blue and ultraviolet optoelectronic and microwave devices. The growth of epitaxial layers by MOCVD and MBE techniques requires the close control of purity, doping, alloy composition, thickness and interface quality. Secondary ion mass spectrometry (SIMS) is a very suitable characterization technique because of its ability to depth profile with high sensitivity and good depth resolution. We describe depth profiling for the concentration of dopants (Mg, Zn and Si) and common impurities such as O, C, H and some metals incorporated during the growth as well as for determining In and Al composition. The samples include a GaN p-n junction, AlGaN/InGaN/GaN LED, quantum well LED and AlN/GaN photodetector. Also, SIMS measurement on finished LED devices will be described for the purpose of failure analysis and reverse engineering. The wealth of information so obtained has proven very useful for solving problems encountered in both research and production.
This paper is part of Gallium Nitride and Related Materials II
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