Materials Research Society Symposium Proceedings 468, 275 (1997).
Below is the abstract submitted to the meeting, not the abstract of the published paper:
he matrix composition of III-V ternary alloy can usually be determined very accurately by simple techniques such as x-ray diffraction (XRD) and photoluminescence (PL). However, the application of these techniques to III-nitride material such as AlxGa1-xN and InxGa1-xN are hampered by the residual film stress and the difficulty of identifying the band-to-band emission, respectively. Moreover, XRD and PL are not thin film analysis techniques and cannot determine the composition layer by layer in real device structures. Rutherford Backscattering (RBS) can be used to quantitatively determine the composition; however, the depth resolution is somewhat limited for thin complex structures such as quantum well structure. Secondary Ion Mass Spectroscopy (SIMS) is widely used to profile in-depth the concentration of trace elements because of its high sensitivity (about 1 ppm) and good depth resolution (about 100 Å). While the quantitative analysis of matrix composition under normal analytical conditions is complicated by strong matrix effects. The MCs+ technique overcomes the matrix effect [1] and has been applied successfully to the III-arsenide and III-phosphide systems. The accuracy of this technique depends mainly on the standards, and well-defined samples of AlGaAs and InGaAs can be used for the III-nitride system. By comparing the SIMS results with the other techniques, it is shown that an accuracy of 1% in the x value measurement can be routinely obtained by MCs+ SIMS technique. Applications to LED and QW/LED samples are described. [1] Y. Gao, J. Appl. Phys. 64, 3760 (1988).
This paper is part of Gallium Nitride and Related Materials II
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