andenet-mrssp-468-243

Data for reference andenet-mrssp-468-243

Optical Anisotropy of the Optical Response for Strained GaN Epilayers Grown Along the <10-10> Direction

A. Andenet, B. Gil, Y-M. Le Vaillant, S. Clur, O. Briot, R.L. Aulombard

Materials Research Society Symposium Proceedings 468, 243 (1997).

Below is the abstract submitted to the meeting, not the abstract of the published paper:
GaN epilayers are most often deposited on conventional substrates like Al₂O₃, 6H-SiC, or ZnO, generally (0001) oriented in relation with deposition process and due to differences between the thermal expansion coefficients of the substrate and the nitride compound, the epilayers always experience residual biaxial strain fields. Deposition of GaN epilayers on (10-10)-oriented plane leads to epilayers grown with a monoclinic distortion of the hexagonal lattice whilst growing then on C plane does not alter stricto sensu the C_6v symmetry. We extend previous studies of excitonic properties in strained GaN grown with unaltered hexagonal symmetry along the <0001> direction to epilayers grown along this <10-10> orientation. This results with materials which display noticeably strong anisotropy for the optical response in the growth plane as a function of the residual strain. The influence of the effect is compared, analyzed, and we anticipate of the influence of the effect in GaN-GaAlN quantum wells grown on sapphire substrates.

This paper is part of Gallium Nitride and Related Materials II

Contributed by Materials Research Society

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