popovici-mrssp-468-219

Data for reference popovici-mrssp-468-219

Raman Scattering and Photoluminescence of Mg-Doped GaN Films Grown by Molecular-Beam Epitaxy

G. Popovici, G.Y. Xu, A. Botchkarev, W. Kim, H. Tang, A. Salvador, R. Strange, J.O. White, H. Morkoç

Materials Research Society Symposium Proceedings 468, 219 (1997).

Below is the abstract submitted to the meeting, not the abstract of the published paper:
Raman spectra of Mg doped wurtzite GaN films grown on sapphire (0001) substrate with AlN buffer layer were measured. The pump source was Ar ion line laser with wavelength of 514.5 nm. The Raman E1 (LO-phonon) line full width at half maximum (FWHM) revealed an inverse dependence on the PL intensity of Mg doped samples. It is reasonable since the Raman line is broadened due to presence of the random stress and defects in the lattice which decrease the PL intensity as well. The acceptor bound exciton line (I1) of the low temperature PL .spectra of GaN: Mg samples was found to shift from 357 nm to 360 nm as the ammonia flow rate used in growing the GaN films was increased by a factor of two. The shift indicates that films grown with lower ammonia flow rate are strained. Raman spectroscopy also confirms this conclusion.

This paper is part of Gallium Nitride and Related Materials II

Contributed by Materials Research Society

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