Materials Research Society Symposium Proceedings 468, 207 (1997).
Below is the abstract submitted to the meeting, not the abstract of the published paper:
Cathodoluminescence (CL) image and spectra of undoped GaN epilayers grown by LP-MOVPE on (0001) α-AI2O3 have been studied. The x-ray data are measured by using the ω-mode (open and narrow window) and the 2Θ/Θ-mode. The samples have two kinds of morphologies: sample A has large hexagonal crystalline structure, sample B has mirror-like surface with very smaller grain boundaries. The superposition rule, Δµ¶1ÉΘµ¶2ÉΘµ¶3ÉΘ is FWHM in conventional rocking curve, Δµ¶4É1 represents misorientations of the GaN grains, Δµ¶5É2 represents variation of the lattice spacing. We found that the Δµ¶6É2 is about one order of magnitude smaller than
This paper is part of Gallium Nitride and Related Materials II
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