Materials Research Society Symposium Proceedings 468, 201 (1997).
Below is the abstract submitted to the meeting, not the abstract of the published paper:
The fracture toughness and hardness of bulk single crystal GaN and related materials (e.g. GaP) is presented. Initial work on the deformation and fracture characterization was performed by (macro)indentation with a diamond Vickers indenter. Comparisons are made with the mechanical properties of relevant materials (such as sapphire) in order to discuss the implications for the fracture resistance of GaN in thin film form where stresses may be induced by growth, doping, thermal cycling, and die attachment.
This paper is part of Gallium Nitride and Related Materials II
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