Data for reference seelmanneggebert-mrssp-468-193

Plasma Cleaning and Nitridation of Sapphire Substrates for AlxGa1-xN Epitaxy as Studied by ARXPS and XPD

M. Seelmann-Eggebert, H. Zimmermann, H. Obloh, R. Niebuhr, B. Wachtendorf

Materials Research Society Symposium Proceedings 468, 193 (1997).

The influence of plasma and thermal treatments on the structure and composition of sapphire (00·1) surfaces have been studied by hemispherically recorded x-ray photoelectron spectroscopy in view of substrate preparation for the epitaxy of GaN. Producing well-ordered surfaces, O2 plasma based treatments are found to efficiently remove surface contamination. AlN films with good short-range order are obtained by a simple high temperature nitridation step in the MOCVD reactor.

This paper is part of Gallium Nitride and Related Materials II

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This item cites the following items in the database:

  1. InGaN multi-quantum-well structure laser diodes grown on MgAl2O4 substrates
  2. High responsitivity intrinsic photoconductors based on AlxGa1-xN
  3. The dependence of the electrical characteristics of the GaN epitaxial layer on the thermal treatment of the GaN buffer layer
  4. Influence of sapphire nitridation on properties of gallium nitride grown by metalorganic chemical vapor deposition
  5. Growth of GaN by ECR plasma assisted MBE: The role of charged species
  6. Nitridation effects of substrate surface on the metalorganic chemical vapor deposition growth in InN on Si and alpha-Al2O3 substrates
  7. Nitridation process of sapphire substrate surface and its effect on the growth of GaN
  8. Crystallography of epitaxial growth of wurtzite-type thin films on sapphire substrates

This item is cited by the following items in the database:

  1. Preparation of Sapphire for High Quality III-Nitride Growth

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