mitha-mrssp-468-183

Data for reference mitha-mrssp-468-183

Characterization of the Substrate/Film Interface in GaN Films by Image Depth Profiling Secondary Ion Mass Spectrometry (SIMS)

Salman Mitha, Robert Clark-Phelps, Jon W. Erickson, Y. Gao, Wook Kim, Hadis Morkoç

Materials Research Society Symposium Proceedings 468, 183 (1997).

Below is the abstract submitted to the meeting, not the abstract of the published paper:
Epitaxial GaN films are normally grown on substrates such as sapphire, that are not an exact lattice match for GaN. Thus, during the early states of film growth, defects may be introduced into the film. These defects, or other factors, can lead to islanding and form voids just above the interface, thus leading to nonuniformity in the films and affecting final film quality. SIMS depth profiling is a widely used technique that is used to characterize GaN films. The normal SIMS depth profiles provide chemical and depth information but do not provide any lateral information. Thus, voids at the substrate/film interface manifest themselves as Ô}diffusion}} of the substrate elements into the GaN film. We show that image depth profiling with SIMS is a technique that can be used to identify voids and chemically identify other interface features with lateral dimensions down to about 5000 Å.

This paper is part of Gallium Nitride and Related Materials II

Contributed by Materials Research Society

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