Materials Research Society Symposium Proceedings 468, 161 (1997).
Below is the abstract submitted to the meeting, not the abstract of the published paper:
InN and In-containing alloys are being considered for use as ohmic contact formation layers. Because these materials are usually heavily doped n type as deposited, they are presently only being used for contact to n-type materials. If the residual doping could be reduced, it might be possible to prepare p-type InN for use in contacting p-type materials as well. One possible source of this conductivity is the high defect density induced by the large lattice mismatch between the epilayer and the substrate. In this paper, we will discuss the effect of substrate on InN grown by MOMBE. Material quality was determined by Hall measurement, x-ray diffraction, SEM and AFM. Interfacial reactions between the substrates and the RF nitrogen plasma were studied using ESCA, AES and AFM to correlate the substrate surface characteristics with InN material quality. Substrates investigated include GaAs, sapphire, ZnO and LiAlO2. The ability to form a nitrided surface layer prior to growth was found to be important to the attainment of good surface morphology and crystal quality. Those materials which do not form interlayers, such as ZnO, did not produce significant improvement in spite of the reduced mismatch. Even for those substrates which do form interlayers, low temperature nucleation layers were still found to be beneficial. Finally, while substrate choice was important to the structural quality, it had little or no effect on electrical behavior, suggesting that the residual electron concentration is primarily determined by point defects or impurities.
This paper is part of Gallium Nitride and Related Materials II
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