Data for reference angus-mrssp-468-149

Growth of Bulk, Polycrystalline Gallium and Indium Nitride at Subatmospheric Pressures

John C. Angus, Alberto Argoitia, Cliff C. Hayman, Long Wang, Jeffrey S. Dyck, Kathleen Kash

Materials Research Society Symposium Proceedings 468, 149 (1997).

Below is the abstract submitted to the meeting, not the abstract of the published paper:
Atomic nitrogen, derived from a microwave ECR source, is used to saturate liquid gallium with dissolved nitrogen at temperatures up to 1100°ree;C. Polycrystalline gallium nitride of bulk dimensions is grown from the resulting Ga/N melt. This process circumvents the high pressures required to grow GaN from Ga and molecular nitrogen, N2. The GaN crystals grow as small hexagonal platelets and, in some regions, show a dendritic structure characteristic of freezing from a supersaturated solution. The crystals were characterized by Raman spectroscopy, elemental analysis, scanning electron microscopy, transmission electron microscopy, x-ray and electron diffraction, and photoluminescence spectroscopy. The crystals were primarily wurtzitic, although a few patches of cubic, zinc blende structure were noted. The polycrystalline GaN shows band edge and Ô}yellow band}} photoluminescence at both 10 K and 300 K despite the presence of grain boundaries and planar defects. The experimental results show that the recombination of N to N2 is slow compared to the parallel formation of GaN. The thermochemistry of GaN synthesis from both atomic nitrogen and molecular nitrogen will be discussed and some reasons presented for the slow recombination rate of atomic nitrogen at the reaction conditions. The results demonstrate that atomic nitrogen is an attractive alternative to molecular nitrogen for the synthesis of bulk gallium nitride.

This paper is part of Gallium Nitride and Related Materials II


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