ivantsov-mrssp-468-143

Data for reference ivantsov-mrssp-468-143

GaN Crystals Grown from a Liquid Phase at Reduced Pressure

V.A. Ivantsov, V.A. Sukhoveev, V.A. Dmitriev

Materials Research Society Symposium Proceedings 468, 143 (1997).

Below is the abstract submitted to the meeting, not the abstract of the published paper:
Gallium nitride crystals were grown from Ga-based melt at an ambient pressure not exceeding 3 atm. Growth temperature was ∼1000°ree;C. The crystals are 2H-GaN having (0001) basal plane orientation. Crystal size varied from 0.05x0.05x0.01 mm to 2x2x0.1 mm. Lateral growth rate of the crystals ranged from 0.05 to 1 mm/hr. Normal growth rate was about 0.005 mm/hr. Depending on growth conditions, crystals have platelet or dendrite shape. The crystals were characterized by optical and electron microscopy, x-ray diffraction, photo- and cathodoluminescence, and optical absorption. Characteristics of the crystals will be presented.

This paper is part of Gallium Nitride and Related Materials II

Contributed by Materials Research Society

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