sidorov-mrssp-468-137

Data for reference sidorov-mrssp-468-137

Gallium Nitride Doped With Zinc and Oxygen - The Crystal for the Blue Polarized Light-Emitting Diodes

V.G. Sidorov, A.G. Drezhuk, M.V. Zaitsev, D.V. Sidorov

Materials Research Society Symposium Proceedings 468, 137 (1997).

Below is the abstract submitted to the meeting, not the abstract of the published paper:
It is know that LED’s emit unpolarized light. We report on the first creation of LED’s with blue polarized emission based on M-i-n-GaN-structures with active regions of GaN doped simultaneously with zinc and oxygen. High-quality (1120) GaN(Zn,O) layers and emitting-i-n-structures were grown on (1012) sapphire substrates by chloride-hydride vapour phase epitaxy. The structural, electrical, optical and luminescence properties of GaN(Zn,O) layers and i-n-structures as function of Zn and O concentrations were studied. Spectral maximum of luminescence the polarization diagram method was used. It was shown that polarization of luminescence is due to intracenter electron transitions in centers formed by Zn and O primary oriented in GaN lattice. The optimum growth conditions for fabrication of LED’s with maximum polarization have been found. These LED’s can serve as sources in polarization instruments having electronic recording of optical signals. The suitability of using GaN(Zn,O) layers for active regions of sources with polarized emission and creating a number of optoelectronic devices are considered. This work was partly supported by the University of Arizona, USA.

This paper is part of Gallium Nitride and Related Materials II

Contributed by Materials Research Society

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