joshkin-mrssp-468-13

Data for reference joshkin-mrssp-468-13

Growth and Characterization of In-Based Nitride Compounds and Their Double Heterostructures

V.A. Joshkin, J.C. Roberts, E.L. Piner, M.K. Behbehani, F.G. McIntosh, L. Wang, S. Lin, I. Shmagin, S. Krishnankutty, R.M. Kolbas, N.A. El-Masry, S.M. Bedair

Materials Research Society Symposium Proceedings 468, 13 (1997).

Below is the abstract submitted to the meeting, not the abstract of the published paper:
InGaN and AlGaInN compounds play a critical role in the potential applications of the nitride material system. These In-based nitride compounds lag behind their corresponding GaN and AlGaN counterpart due to several problems such as weak In-N bond, In atoms surface segregation, formation of In metal droplets, deep levels with the bandgap, potential lack of solid solubility, and high background doping. The incorporation of In in the growing films is affected by several factors: growth temperature, H₂ and NH₃ flow rates, reactor design, and the partial pressure of the organometallic sources. Optimization of these factors and others that led to device quality InGaN and AlInGaN and AlGaN/InGaN double heterostructures will be presented.

This paper is part of Gallium Nitride and Related Materials II

Contributed by Materials Research Society

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