mackenzie-mrssp-468-123

Data for reference mackenzie-mrssp-468-123

Incorporation and Optical Activation of Er in Group III-N Materials Grown by Metalorganic Molecular-Beam Epitaxy

J.D. MacKenzie, C.R. Abernathy, S.J. Pearton, S.M. Donovan, U. Hömmerich, M. Thaik, X. Wu, F. Ren, R.G. Wilson, J.M. Zavada

Materials Research Society Symposium Proceedings 468, 123 (1997).

Below is the abstract submitted to the meeting, not the abstract of the published paper:
Metalorganic molecular beam epitaxy has been utilized to incorporate Er into AlGaInN materials during growth. Photoluminescence from AlN:Er doped during growth was several times more intense than that observed from implanted material. 1.54 μm Er³⁺ luminescence in III nitrides has been studied with the intention of understanding the basic incorporation behavior and optical activity of Er³⁺ in the wide bandgap nitrides and evaluating the potential for Er-based electroluminescent devices. The Er concentration dependence and thermal quenching of 1.54 μm photoluminescence has been investigated for a range of III-N materials including binary AlN, GaN, InN, as well as ternary compositions. A substantial decrease in thermal quenching has been observed with increasing bandgap. As well, growth related issues such as surface morphology, structural quality, and segregation will be discussed. Comparisons of photoluminescence from these materials show the effects of bandgap, matrix ionicity, and impurity background on optical activation. Incorporation and excitation of Er in basic device structures, such as a metal-insulator:Er-n diodes, GaN:Er/AlN microdisk and quantum well active layer structures, will be discussed.

This paper is part of Gallium Nitride and Related Materials II

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