gotz-mrssp-468-117

Data for reference gotz-mrssp-468-117

Spectroscopic Identification of the Acceptor-Hydrogen Complex in Mg-Doped GaN Grown by MOCVD

W. Gotz, M.D. McCluskey, N.M. Johnson, D.P. Bour, E.E. Haller

Materials Research Society Symposium Proceedings 468, 117 (1997).

Below is the abstract submitted to the meeting, not the abstract of the published paper:
Local vibrational modes (LVMs) are reported for Mg-doped GaN grown by MOCVD. Hetero-epitaxial layers of GaN:Mg, either as-grown, thermally activated, or deuterated, were investigated with low-temperature Fourier-transform infrared absorption spectroscopy. The as-grown material, which was semi-insulating, exhibits a LVM at 3125 cm¹. Thermal annealing increases the p-type conductivity, as established with Hall effect measurements, and reduces the intensity of this LVM. Deuteration of the activated material creates a LVM at 2321 cm^-1. The isotropic shift establishes the presence of hydrogen in the vibrating complex. The new LVMs are assigned to the stretch modes of the Mg-H and Mg-D complexes in GaN. The vibrational frequencies are indicative of a strong N-H bond as recently proposed from total energy calculations. We thus provide spectroscopic evidence to support the model that the semi insulating nature of as-MOCVD-grown GaN:Mg involves hydrogen neutralization of the acceptors. *Work supported by DARPA, contract # MDA972-95-3-008.

This paper is part of Gallium Nitride and Related Materials II

Contributed by Materials Research Society

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