Data for reference kawaguchi-mrssp-449-89

The compositionpulling effect in InGaN growth on the GaN and AlGaN epitaxial layers grown by MOVPE

Y. Kawaguchi, M. Shimizu, K. Hiramatsu, N. Sawaki

Materials Research Society Symposium Proceedings 449, 89 (1997).

This item is cited by the following items in the database:

  1. Radiative recombination in In0.15Ga0.85N/GaN multiple quantum well structures

Contributed by A submitted manuscript, on Monday, November 8, 1999 10:52:05 AM

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