Data for reference lilientalweber-mrssp-449-417

Nano-Tubes in GaN

Z Liliental-Weber, Y Chen, S Ruvimov, W Swider, J Washburn

Materials Research Society Symposium Proceedings 449, 417 (1997).

Formation of vertical hollow nano-tubes in GaN grown on different substrates using different growth methods is described. These defects are shown to be of several different types, some related to threading dislocations, but others originating at tubular inversion domains, or crystal inhomogeneities. Kinetic mechanism based on slow growth rate on polar {0-111} surfaces is proposed to explain the origin of these defects.

This item is cited by the following items in the database:

  1. Pinholes, Dislocations and Strain Relaxation in InGaN

Contributed by B. Jahnen from hugo.fen.baynet.de. on Sunday, July 12, 1998 7:42:33 AM

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