Data for reference balkas-mrssp-449-41

Growth of Bulk AlN and GaN Single Crystals by Sublimation.

CM Balkas, Z Sitar, T Zheleva, L Bergman, IK Shmagin, JF Muth, R Kolbas, R Nemanich, RF Davis

Materials Research Society Symposium Proceedings 449, 41 (1997).

Single crystals of AlN to 1 mm thickness were grown in the range 1950-2250 C on 10x10 mm2 6H-SiC substrates via sublimation-recondensation method. GaN single crystals were also grown under an ammonia flow.

This item cites the following items in the database:

  1. Growth of high purity AlN crystals
  2. Growth and morphology of GaN
  3. Preparation of gallium nitride
  4. Crystal growth of GaN by the reaction between gallium and ammonia
  5. Heteroepitaxial thermal gradient solution growth of GaN
  6. High Pressure Thermodynamics of GaN
  7. Equilibrium pressure of N2 over GaN and high pressure solution growth of GaN

This item is cited by the following items in the database:

  1. AMMONO method of BN, AlN and GaN synthesis and crystal growth.
  2. Current status of GaN crystal growth by sublimation sandwich technique
  3. The Durability of Various Crucible Materials for Aluminum Nitride Crystal Growth by Sublimation

Contributed by A.E. Nikolaev from www-proxy.ioffe.rssi.ru. on Wednesday, June 11, 1997 5:07:12 AM

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