ponce-mrssp-449-405

Data for reference ponce-mrssp-449-405

Nanopipes and Inversion Domains in High-Quality GaN Epitaxial Layers

F. A. Ponce, W. T. Young, D. Cherns, J. W. Steeds, S. Nakamura

Materials Research Society Symposium Proceedings 449, 405 (1997).

In addition to dislocations, two distinct types of defects are observed in high quality GaN thin films. These defects have a filmanetary nature, are oriented along the <0001> direction, and may not be easily distinguished from the pure dislocations. Using a combination of conventional electron microscopy with convergent beam electron diffraction techniques, we show that one of these types of dislocations consist of nanopipes which are coresless dislocations with Burgers vectors <0001>. The other type of observed defects consist of inversion domains with [000-1] orientation within the [0001] matrix. The origin of the inversion domains and nanopipes is discussed.

This item is cited by the following items in the database:

The Polarity of GaN: a Critical Review

Contributed by Fernando A. Ponce from jumanji.parc.xerox.com. on Sunday, March 23, 1997 9:30:40 PM

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