Data for reference riechert-mrssp-449-149

MBE Growth of (In)GaN for LED Applications

H. Riechert, R. Averbeck, A. Graber, M. Schienle, U. Strauß, H. Thews

Materials Research Society Symposium Proceedings 449, 149 (1997).

This item is cited by the following items in the database:

  1. Fundamentals, Material Properties and Device Performances in GaN MBE using On-Surface Cracking of Ammonia
  2. The role of gaseous species in group-III nitride growth
  3. N-Limited versus Ga-Limited Growth on GaN(0001(bar)) by MBE using NH3
  4. Surface Morphology of MBE-grown GaN on GaAs(001) as Function of the N/Ga-ratio
  5. N-Limited versus Ga-Limited Growth on GaN(0001(bar)) by MBE using NH3

Contributed by A submitted manuscript, on September 12, 1997 8:37:54 PM

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