perlin-mrssp-449-1173

Data for reference perlin-mrssp-449-1173

Optical and electrical characteristics of single-quantum-well InGaN light emitting diodes

Piotr Perlin, , Marek Osinski, Petr G. Eliseev

Materials Research Society Symposium Proceedings 449(Pittsburgh, PA), 1173 (1997).

Electroluminescence and photoluminescence of Nichia single-quantum-well Al_0.2Ga_0.8N/In_0.45Ga_0.55N/GaN green light-emitting diodes is studied over a broad range of temperatures (15-300 K) and currents (0.2 mA - 2 A). The most striking behavior is an anomalous temperature shift of both photo- and electroluminescence, with the emission peak moving towards higher energies with increasing temperature. This blue shift is opposite to that of the energy gap of the active layer, which practically excludes interband transitions as responsible for the observed optical transitions. It is suggested that population effects within the band tails can account for the observed anomaly. It is also determined that the current flowing through the p-n junction is dominated by carrier tunneling, the omnipresent effect in the GaN-based optoelectronic devices.

This item is cited by the following items in the database:

Effects of proton irradiation on AlGaN/InGaN/GaN green light emitting diodes

Contributed by M. Osinski from sakai24.svbl.tokushima-u.ac.jp. on November 17, 1997 7:45:00 PM

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