Data for reference maki-mrssp-395-919

Optically pumped GaN-AlGaN double-heterostructure lasers grown by ECR-GSMBE and HVPE.

PA Maki, RJ Molnar, RL Aggarwal, ZL Liau, I Melngailis

Materials Research Society Symposium Proceedings 395, 919 (1996).

The laser structures were grown using an ECR-GSMBE on thick (10 mcm) GaN buffers grown by HVPE on c-plane sapphire. Laser emission with well-defined cavity modes in opticaly pumped GaN-Al0.1Ga0.9N DH lasers is observed.

This item cites the following items in the database:

  1. Above room temperature near ultraviolet lasing from an optically pumped GaN film grown on sapphire
  2. Spontaneous and stimulated emission from photopumped GaN grown on SiC
  3. Vertical-cavity stimulated emission from photopumped InGaN/GaN heterojunctions at room temperature
  4. Observation of stimulated emission in the near ultraviolet from a molecular beam epitaxy grown GaN film on sapphire in a vertical-cavity, single pass configuration
  5. Operation of a compactelectron cyclotron resonancesource for the growth of GaN by MBE

This item is cited by the following items in the database:

  1. Physical Properties of Bulk GaN Crystals Grown by HVPE

Contributed by A.E. Nikolaev from www-proxy.ioffe.rssi.ru. on Tuesday, June 10, 1997 3:01:19 PM

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