ping-mrssp-395-769

Data for reference ping-mrssp-395-769

Effects of reactive ion etching on the electrical properties of n-GaN surfaces

A.T. Ping, A.C. Schmitz, M. Asif Khan, I. Adesida

Materials Research Society Symposium Proceedings 395, 769 (1996).

Dry etch damage on n-GaN has been investigated using Pd Schottky diodes fabricated on surfaces etched by conventional reactive ion etching with SiCl4 plasma. TheSchottky barrier height and ideality factor were investigated as a function of the plasma self-bias voltage. Current-voltage measurements revealed severe degradation of both the forward and reverse characteristics for plasma self-bias voltages in excess of -150 V.

Contributed by A. T. Ping from barnegat.ccsm.uiuc.edu. on Sunday, February 2, 1997 10:53:00 PM

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