Data for reference fischer-mrssp-395-571

Fine structure of the 3. 42 eV emission band in GaN

S. Fischer, C. Wetzel, W. Walukiewicz, E. E. Haller

Materials Research Society Symposium Proceedings 395, 571 (1996).

This item is cited by the following items in the database:

  1. Properties of GaN epilayers grown on misoriented sapphire substrates

Contributed by A submitted manuscript, on Wednesday, July 22, 1998 3:20:06 PM

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