Data for reference hangleiter-mrssp-395-559

Near-bandgap photoluminescence decay time in GaN epitaxial layers grown on sapphire

A Hangleiter, JS Im, T Forner, V Härle, F Scholz

Materials Research Society Symposium Proceedings 395, 559 (1996).

Using picosecond time-resolved photoluminescence we have studied the decay time of excess carriers in GaN epitaxial layers over a wide range of temperatures from 4~K up to 400~K. At low temperature, a thermal dissociation of donor-bound excitons is observed. At higher temperatures up to room temperature, the luminescence decay at moderate excitation is governed by trapping of photogenerated electrons in ionized shallow donor levels. Using measured luminescence intensities to determine the quantum efficiency, we obtain the radiative lifetime of free excitons from low temperature up to room temperature. We use these data to determine the radiative recombination coefficient and the interband momentum matrix element.

This item is cited by the following items in the database:

  1. RADIATIVE LIFETIME OF EXCITONS IN GaInN/GaN QUANTUM WELLS
  2. Exciton dynamics in thick GaN MOVPE epilayers deposited on sapphire.
  3. Micro Epitaxial lateral overgrowth of GaN/sapphire by Metal Organic Vapour Phase Epitaxy

Contributed by Andreas Hangleiter from pi4wap0.physik.uni-stuttgart.de. on Thursday, September 19, 1996 3:02:38 AM

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