Halide vapor phase epitaxy of gallium nitride films on sapphire and silicon substrates.

Materials Research Society Symposium Proceedings 395, 243 (1996).

Thick (200 mcm) GaN films were grown by HVPE on (0001) sapphire and (111)Si substrates at rates 70 mcm/hr. DCXRD measurements of GaN/sapphire indicate FWHM values 220 arcsec.

This item cites the following items in the database:

1. p-type conduction in Mg-doped GaN treated with low-energy electron beam irradiation
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3. Candela-class high-brightness InGaN/AlGaN double- heterostructure blue-light-emitting diodes
4. High dislocation densities in high efficiency GaN-based light-emitting diodes
5. Effects of an AlN buffer layer on crystallographic structure and on electrical and optical properties of GaN and Ga _1-xAl _xN (0 < x ≤ 0.4) films grown on sapphire substrates by MOVPE
6. The preparation and properties of vapor-deposited single-crystal-line GaN
7. Hydride vapor phase epitaxial growth of a high quality GaN film using a ZnO buffer layer
8. Properties of Zn-doped GaN. I. Photoluminescence
9. Growth of single crystal GaN substrate using hydride vapor phase epitaxy
10. X-Ray Differential diffractometry applied to GaN grown on SiC
11. A new technique for crystallographic characterization of heteroepitaxial crystal films
12. The Growth of Single Crystalline GaN on a Si Substrate Using AlN as an Intermediate Layer

This item is cited by the following items in the database:

1. Physical Properties of Bulk GaN Crystals Grown by HVPE

Contributed by A.E. Nikolaev from www-proxy.ioffe.rssi.ru. on Tuesday, June 10, 1997 3:07:50 PM

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