Data for reference mcintosh-mrssp-395-219

AlGaInN Quaternary Alloys by MOCVD

FG McIntosh, EL Piner, KS Boutros, JC Roberts, YW He, M Mousa, NA El-Masry, SM Bedair

Materials Research Society Symposium Proceedings 395(1), 219 (1996).

AlGaInN quaternary alloy based devices can cover the emission wavelength fron deep UV to red. This quaternary alloy also offers lattice matched heterostructures for both optical and microwave devices. We will report on the MOCVD growth of AlxGa1-x-yInyN (0<x<0.12), (0<y<0.15) at 750 C on sapphire substrates, using TMG, EDMIn, TMAl and NH3 precursors. Chemical composition, lattice constants and bandgaps of the grown films were determined by EDS, X-ray diffraction and room temperature PL. Data indicates that the lattice constants can also be deduced using Vegard's law, indicating a solid solution of this alloy. PL showed band edge emission, however emission from deep levels was also observed. Optimized growth conditions and heterostructures using this quaternary alloy will be presented.

This item cites the following items in the database:

  1. Candela-class high-brightness InGaN/AlGaN double- heterostructure blue-light-emitting diodes
  2. High quality InGaN films by atomic layer epitaxy
  3. Growth and characterization of AlInGaN quaternary alloys

This item is cited by the following items in the database:

  1. Growth and Properties of InGaN and AlInGaN Thin Films on (0001) Sapphire

Contributed by E. L. Piner from gator1-74.mte.ncsu.edu. on Wednesday, December 11, 1996 4:27:05 PM

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