Optoelectronic and structural properties of high-quality GaN grown by hydride vapor phase epitaxy

Materials Research Society Symposium Proceedings 395, 189 (1996).

GaN films have been grown by HVPE in a vertical reactor design. We report on GaN growth directly on sapphire using a GaCl surface pretreatment. The electrical properties of these films compare favorably with the highest values reported in the literature for GaN. Specifically, a RT Hall mobility as high as 540 cm2/Vs, with a corresponding carrier concentration of 2x10¹⁷ cm^-3, have been attained. Additionally, the vertical reactor design has assisted in reducing nonuniformities in both film thickness as well as in transport properties due to depletion effects, as compared with horizontal designs. The dislocation density in these films has been determined by plan view TEM to be roughly 3x10⁸ cm-2. PL spectra obtained at 2 K show intense sharp near bandedge emission with minimal deep level emissions. Stimulated emission has been observed in these films, utilizing a nitrogen laser pump source (wavelength = 337.1 nm) with a threshold pump power of about 0.5 MW/cm². these results suggest that HVPE is viable for the growth of high quality nitride films, particularly for the subsequent homoepitaxial overgrowth of device structures by other growth methods such as OMVPE or MBE.

This item is cited by the following items in the database:

1. Selective Area Growth of GaN Directly on (0001) Sapphire by the HVPE Technique
2. Synthesis and Growth of Gallium Nitride by the Chemical Vapor Reaction Process (CVRP)

Contributed by S. Strite from internet-gateway-x.zurich.ibm.com. on Monday, January 13, 1997 4:50:24 AM

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