Data for reference korakakis-mrssp-395-151

Growth and Doping of GaN Directly on 6H-SiC by MBE

D Korakakis, A Sampath, ID Goepfert, TD Moustakas

Materials Research Society Symposium Proceedings 395, 151 (1996).

This item is cited by the following items in the database:

  1. Electrical characteristics of GaN/6H-SiC n-p heterojunctions.

Contributed by A.E. Nikolaev from www-proxy.ioffe.rssi.ru. on Wednesday, June 11, 1997 2:04:09 PM

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