Gallium Incorporation Kinetics During GSMBE of GaN

Materials Research Society Symposium Proceedings 395, 141 (1996).

The kinetics of Ga incorporation during gas-source molecular beam epitaxy of GaN are investigated for varying substrate temperature and incident ammonia flux. Incident Ga atoms eventually either: 1) react with NH₃ to form GaN, 2) accumulate on the film surface, or 3) desorb. Low substrate temperatures lead to significant Ga surface accumulation due to the temperature-dependent reactivity of NH₃ towards Ga. High substrate temperatures give rise to significant Ga desorption. Increasing NH₃ flux retards both Ga surface accumulation and Ga desorption. The GaN formation rate variation with substrate temperature peaks near 750^oC and increases with NH₃ flux. The observation of two distinct and very low activation energies for Ga desorption suggests a relatively complex surface chemistry and a strong likelyhood that hydrogen is playing an important role.

This item cites the following items in the database:

1. GaN, AlN, and InN: A review

This item is cited by the following items in the database:

1. N-Limited versus Ga-Limited Growth on GaN(0001(bar)) by MBE using NH3
2. N-Limited versus Ga-Limited Growth on GaN(0001(bar)) by MBE using NH3

Contributed by R. Held from pc22.ece.umn.edu. on February 24, 1998 8:34:35 PM

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