Data for reference meyer-mrssp-378-521

Time resolved photoluminescence spectroscopy on GaN epitaxial layers

BK Meyer, D Volm, C Wetzel, L Eckey, JC Holst, P Maxim, R Heitz, A Hoffmann, I Broser, EN Mokhov, PG Baranov, C Qiu

Materials Research Society Symposium Proceedings 378, 521 (1995).

Free and bound exciton luminescences as well as donor-acceptor pair recombination of GaN epitaxial layers on 6H-SiC and sapphire substrates were investigated using time integrated and time resolved photoluminescence measurements at low temperatures. Lifetimes are determined for the donor bound exciton at 3.4722 eV and for two acceptor bound excitons with energies of 3.4572 eV and 3.459 eV. Luminescences between 3.29 eV and 3.37 eV are identified as due to excitons deeply bound to centers located near the substrate-epilayer interface.

This item is cited by the following items in the database:

  1. Exciton dynamics in thick GaN MOVPE epilayers deposited on sapphire.
  2. Micro Epitaxial lateral overgrowth of GaN/sapphire by Metal Organic Vapour Phase Epitaxy

Contributed by Christian Wetzel from b2-msd2.lbl.gov. on Wednesday, September 25, 1996 10:41:56 PM

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