akasaki-mrssp-339-443

Data for reference akasaki-mrssp-339-443

MOVPE growth of high quality AlGaN/GaInN heterostructures for short wavelength light emitter

I. Akasaki, H. Amano

Materials Research Society Symposium Proceedings 339, 443 (1994).

High-quality AlGaN/GaN and AlGaN/GaInN double heterostructures were fabricated by MOVPE using low temperature AlN buffer layer. AlGaN/GaN double heterostructure show low threshold stimulated emission by optical pumping at room temperature for both edge and surface modes. The peak wavelength of stimulated emission for edge mode was 369.5 nm. The peak wavelength for stimulated emission can be widely changed by using GaInN as the activew layer. AlGaN/GaInN DH with InN molar fraction of the active layer of 0.09 shows room temperature low-threshold stimulated emission for edge mode by optical pumping with peak wavelength of 402.5 nm.

This item is cited by the following items in the database:

AlGaN-Based Bragg Reflectors

Contributed by O. Ambacher from pc65.wsi.tu-muenchen.de. on September 10, 1997 4:37:39 AM

If you are a registered user, and would like to help the journal improve its references database, you can help by adding data to the database. The author list may be incomplete; the abstract or title may be missing, and the list of references cited by the article is probably absent or incomplete.