Data for reference nakamura-mrssp-339-173

InGaN/AlGaN Double-Heterostructure Blue LED's

S. Nakamura

Materials Research Society Symposium Proceedings 339, 173 (1994).

High-brightnes InGaN/AlGaN double-heterostructure (DH) blue-light-emitting diodes (LEDs) with a luminous intensity of 1.2 cd were fabricated sucessfully for the first time. As an active layer, a Zn-doped InGaN layer was used. The peak wavelength and the full width at half-maximum of the electroluminescence were 450 nm and 70 nm, respectively. The forward voltage was as low as 3.6V at 20 mA.

This item is cited by the following items in the database:

  1. ScAlMgO4: an Oxide Substrate for GaN Epitaxy
  2. Studies of Mg-GaN grown by MBE on GaAs(111)B substrates

Contributed by Eric S. Hellman from nsr.mij.mrs.org.

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