lei-mrssp-242-433

Data for reference lei-mrssp-242-433

A comparative study of GaN epitaxy on Si(001) and Si(111) substrates

T Lei, TD Moustakas

Materials Research Society Symposium Proceedings 242, 433 (1992).

Epitaxial GaN films were grown on Si(001) and (111) substrates, using a two-step process. The films on Si(001) are single crystalline having the zincblende structure, while those on Si(111) have the wurtzite structure. The crystalline qualities of the films were studied by X-ray diffraction. While the zincblende GaN has a perfect cubic structure, the wurtzitic GaN on Si(111) has a considerable amount of stacking faults along (0002) direction, which gives rise to significant zincblende component with (111) orientation. Room temperature resistivity for both type of GaN films was found to be larger than 100 Omega .cm. The temperature dependence of the resistivity gives a defect level at 110 meV for wurtzitic GaN and 80 meV for cubic GaN. Optical studies show that GaN on Si(001) has a gap 3.2 eV, and GaN on Si(111) has a gap of 3.4 eV at room temperature.

This item is cited by the following items in the database:

Structural and optical properties of GaN laterally overgrown on Si(111) by metalorganic chemical vapor deposition using an AlN buffer layer

Contributed by H. Marchand from montreal.ucsb.edu. on Thursday, February 11, 1999 3:20:28 PM

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