Data for reference sitar-mrssp-162-537

Structural defects in GaN epilayers grown by gas source molecular beam epitaxy

Z. Sitar, M. J. Paisley, B. Yan, R. F. Davis

Materials Research Society Symposium Proceedings 162, 537 (1990).

This item is cited by the following items in the database:

  1. GaN, AlN, and InN: A review
  2. Growth of Ga-face and N-face GaN films using ZnO Substrates
  3. Degradation mechanisms in AlGaN/InGaN/GaN light sources

Contributed by S. Strite

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