Data for reference powell-mrssp-162-525

Growth of high-resistivity wurtzite and zincblende structure single crystal GaN by reactive-ion molecular beam epitaxy

R. C. Powell, G. A. Tomasch, Y.-W. Kim, J. A. Thornton, J. E. Greene

Materials Research Society Symposium Proceedings 162, 525 (1990).

This item is cited by the following items in the database:

  1. GaN, AlN, and InN: A review
  2. ScAlMgO4: an Oxide Substrate for GaN Epitaxy
  3. Inheritance of zinc-blende structure from 3C-SiC/Si(001) substrate in growth of GaN by MOCVD
  4. GaN films prepared by ECR plasma-assisted deposition

Contributed by S. Strite

If you are a registered user, and would like to help the journal improve its references database, you can help by adding data to the database. The author list may be incomplete; the abstract or title may be missing, and the list of references cited by the article is probably absent or incomplete.

MRS Internet Journal of Nitride Semiconductor Research

last updated Monday, May 2, 2005 1:26:37 PM.
© 1998 The Materials Research Society