Data for reference pankove-mrssp-162-515

Perspective on gallium nitride

J. I. Pankove

Materials Research Society Symposium Proceedings 162, 515 (1990).

This item is cited by the following items in the database:

  1. GaN, AlN, and InN: A review
  2. Growth of zinc blende-GaN on beta -SiC coated (001) Si by molecular beam epitaxy using a radio frequency plasma discharge, nitrogen free-radical source
  3. Dry patterning of InGaN and InAlN
  4. GaN patterned film synthesis: Carbon depletion by hydrogen atoms produced from NH3activated by electron impact GaN patterned film synthesis
  5. Comparison of Luminescence and Physical Morphologies of GaN Epilayers

Contributed by S. Strite

If you are a registered user, and would like to help the journal improve its references database, you can help by adding data to the database. The author list may be incomplete; the abstract or title may be missing, and the list of references cited by the article is probably absent or incomplete.

MRS Internet Journal of Nitride Semiconductor Research

last updated Monday, May 2, 2005 1:26:24 PM.
© 1998 The Materials Research Society