Data for reference pankove-mrssp-97-409

Properties of gallium nitride

J. I. Pankove

Materials Research Society Symposium Proceedings 97, 409 (1987).

This item is cited by the following items in the database:

  1. GaN, AlN, and InN: A review
  2. Growth of zinc blende-GaN on beta -SiC coated (001) Si by molecular beam epitaxy using a radio frequency plasma discharge, nitrogen free-radical source

Contributed by S. Strite

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