1987

• Properties of gallium nitride

1990

• Growth and physical properties of rf-magnetron sputtered InN semiconducting films
• MOCVD of wide bandgap III-V semiconductors using novel precursors
• Microstructural and optical characterization of GaN films grown by PECVD on (0001) sapphire substrates
• Substrate and temperature dependent morphology of rf-sputtered indium nitride films
• Electron microscopy of InN films
• Perspective on gallium nitride
• Growth of high-resistivity wurtzite and zincblende structure single crystal GaN by reactive-ion molecular beam epitaxy
• Structural defects in GaN epilayers grown by gas source molecular beam epitaxy

1991

• Elastic energies of coherent germanium islands on silicon

1992

• A comparative study of GaN epitaxy on Si(001) and Si(111) substrates

1993

• Growth and doping of GaN films by ECR assisted MBE

1994

• InGaN/AlGaN Double-Heterostructure Blue LED's
• Tunable Second-Harmonic Studies of GaN Films Near the Fundamental Band Edge
• GaN on 6H-SiC-structural and optical properties
• Infrared luminescence from MOCVD GaN
• Native defects and impurities in cubic and wurtzite GaN
• MOVPE growth of high quality AlGaN/GaInN heterostructures for short wavelength light emitter

1995

• Photoluminescence studies of GaN and AlGaN layers under hydrostatic pressure
• Time resolved photoluminescence spectroscopy on GaN epitaxial layers
• The Role of Impurities in Hydride Vapor Phase Epitaxial Grown Gallium Nitride
• Phase stability and electronic structures of GaAs_1-xN_x Alloys.

1996

• Understanding the pyramidal growth of GaN by Transmission Electron Microscopy
• Structural Defects in Heteroepitaxial and Homoepitaxial GaN
• Near-bandgap photoluminescence decay time in GaN epitaxial layers grown on sapphire
• Electronic and optical properties of the group-III nitrides, their heterostructures and alloys
• Growth kinetics and structural quality in GaN epitaxy by low pressure MOVPE
• Properties of Zn Implanted GaN
• NH₃ as nitrogen source in MBE growth of GaN
• New Buffer Layers for GaN on Sapphire by Atomic Layer and Molecular Stream Epitaxy
• AlGaInN Quaternary Alloys by MOCVD
• Optoelectronic and structural properties of high-quality GaN grown by hydride vapor phase epitaxy
• Correlation of surface morphology and optical properties of GaN by conventional and selective-area MOCVD
• Effects of reactive ion etching on the electrical properties of n-GaN surfaces
• Schottky barrier height of Ni, Pt, Pd, and Au on n-type GaN
• Growth of GaN without yellow luminescence
• Optically pumped GaN-AlGaN double-heterostructure lasers grown by ECR-GSMBE and HVPE.
• Halide vapor phase epitaxy of gallium nitride films on sapphire and silicon substrates.
• Growth and properties of bulk single crystals of GaN
• Growth and Doping of GaN Directly on 6H-SiC by MBE
• Spatially-resolved photoluminescence and Raman study on the GaN/substrate interface
• The effect of a GaN nucleation layer on GaN film properties grown by metalorganic chemical vapour deposition
• Growth and optical properties of GaN grown by MBE on novel lattice-matched oxide substrates
• Electric breakdown in nitride pn junction
• 2. 2 eV luminescence in GaN
• Hydrogen acceptors H-acceptor complexes in GaN,
• Light-Emitting Devices based on Gallium Nitride and related Compound Semiconductors
• AlGaN/GaN/AlGaN double heterojunction blue LEDs on 6H SiC substrates
• Electrical properties of Nichia AlGaN/InGaN/GaN blue LEDs in a wide current/temperature range
• Gallium Incorporation Kinetics During GSMBE of GaN
• Growth and Optical Properties of GaN grown by MBE on novel lattice-matched oxide substrates
• Fine structure of the 3. 42 eV emission band in GaN
• Strain Effect in GaN on Sapphire: Towards a Quantitative Comprehension
• Photoluminescence related to the 2-dimensinal electron gas in modulation doped GaN/AlGaN structures
• GaAsN alloys and GaN/GaAs double heterostructures
• Cathodoluminescence study of diffusion length and surface recombination velocity in III-V multiple quantum well structures,
• Polycrystalline diamond, boron nitride and carbon nitride thin film cold cathodes
• Structure of the 2H-AlN/6H-SiC Interface
• Thermodynamic analysis and growth characterization of thick GaN films grown by chloride VPE using GaCl₃/N₂ and NH₃/N₂

1997

• Nanopipes and Inversion Domains in High-Quality GaN Epitaxial Layers
• Mapping of Donor Impurities in GaN by Raman Imaging
• Growth of Bulk AlN and GaN Single Crystals by Sublimation.
• Synthesis of Bulk, Policristalline Gallium Nitride at Low Pressure.
• Metalorganic Vapor Phase Epitaxial Growth of GaInN/GaN hetero structures and quantum wells
• Characterization of near edge optical transistions in undoped and doped GaN/Sapphire grown by MOVPE, HVPE and GSMBE
• Spntaneous and Stimulated Recombination in the Nitrides
• On surface cracking of ammonia for MBE growth of GaN
• AlGaN based materials and heterostructures
• MBE Growth of (In)GaN for LED Applications
• Optical and electrical characteristics of single-quantum-well InGaN light emitting diodes
• MOCVD growth of GaN films on lattice-matched oxide substrates
• Incomplete solubility in nitride alloys
• Nano-Tubes in GaN
• Dislocation luminescence in wurtzite GaN
• Electronic structure of biaxially strained wurtzite crystals GaN and AlN
• Structural and Optical Properties of Homoepitaxial GaN Layers
• A study of the Surface Morphological Features of the Polar Faces of ZnO by Atomic Force Microscopy (AFM) Methods and ALN Thin Films Deposited on ZnO Polar Faces by PLD
• Structural and optical properties of nitride based heterostructure and quantum well structure
• Growth of GaN by sublimation technique and homoepitaxial growth by MOCVD
• Tunnel Effects in Luminescence Spectra of InGaN/AlGaN/GaN Light-Emitting Diodes
• A model for indium incorporation in the growth of InGaN films
• Photoluminescence, reflectance, and magnetospectroscopy of shallow excitons in GaN,
• Reactive MBE growth of GaN and GaN:H on GaN/SiC substrates,
• Free and bound excitons in GaN epitaxial films,
• The compositionpulling effect in InGaN growth on the GaN and AlGaN epitaxial layers grown by MOVPE
• Selective Growth of GaN and AlGaN on GaN/AlN/6H-SiC(0001) Multilayer Substrates Via Organometallic Vapor Phase Epitaxy,
• Site-Selective Photoluminescence Excitation and Photoluminescence Spectroscopy of Er-Implanted Wurtzite GaN
• New Precursor Routes to Nanocrystalline Cubic/Hexagonal Gallium Nitride, GaN
• Impurity Contamination of GaN Epitaxial Films From the Sapphire, SiC, and ZnO Substrates
• Reliable, Reproducible, and Efficient MOCVD of III-Nitrides in Production Scale Reactors
• Growth and Characterization of In-Based Nitride Compounds and Their Double Heterostructures
• MOVPE Growth and Characterization of Al_xGa_1-xN Layers on Sapphire
• Growth of Ternary Silicon Carbon Nitride as a New Wide Bandgap Material
• Toward Growing III-V Clusters With Metalorganic Precursors
• Optimization of III-N Based Devices Grown by RF Atomic Nitrogen Plasma Using In Situ Cathodoluminescence
• In_xGa_(1-x)N Alloys as Electronic Materials
• Surface Preparation and Growth Condition Dependence of Cubic GaN Layer on (001) GaAs by Hydride Vapor- Phase Epitaxy
• Growth of GaN Thin Films on Sapphire Substrate by Low- Pressure MOCVD
• MBE Growth of Strain Engineered GaN Thin Films Utilizing a Surfactant
• Quasi-Thermodynamic Analysis of Metalorganic Vapor- Phase Epitaxy of GaN
• Aluminum Nitride Thin Films Grown by Plasma-Assisted Pulsed Laser Deposition on Si Substrates
• Pyrolytic Preparation of Gallium Nitride From [Ga(NEt₂)₃]₂ and Its Ammonolysis Compound
• Pulsed Laser Deposition of Gallium Nitride on Sapphire
• Control of Valence States by a Codoping Method in p-Type GaN Materials
• Structure, Electronic Properties, Defects, and Doping of AlN Using a Self-Consistent Molecular-Dynamics Method
• Spectroscopic Identification of the Acceptor-Hydrogen Complex in Mg-Doped GaN Grown by MOCVD
• Incorporation and Optical Activation of Er in Group III-N Materials Grown by Metalorganic Molecular-Beam Epitaxy
• Gallium Nitride Doped With Zinc and Oxygen - The Crystal for the Blue Polarized Light-Emitting Diodes
• GaN Crystals Grown from a Liquid Phase at Reduced Pressure
• Growth of Bulk, Polycrystalline Gallium and Indium Nitride at Subatmospheric Pressures
• Polar-Twinned Defects in LiGaO₂ Substrates Lattice Matched With GaN
• Substrate Effects on the Growth of InN
• Microstructures of GaN Films Grown on a LiGaO₂ New Substrate by Metalorganic Chemical Vapor Deposition
• Dependence of the Residual Strain in GaN on the AlN Buffer Layer Annealing Parameters
• Excitons Bound to Stacking Faults in Wurtzite GaN
• Characterization of the Substrate/Film Interface in GaN Films by Image Depth Profiling Secondary Ion Mass Spectrometry (SIMS)
• Initial Stages of MOCVD Growth of Gallium Nitride Using a Multistep Growth Approach
• Plasma Cleaning and Nitridation of Sapphire Substrates for Al_xGa_1-xN Epitaxy as Studied by ARXPS and XPD
• Mechanical Properties of Gallium Nitride and Related Materials
• Mosaic Structure and Cathodoluminescence of GaN Epilayer Grown by LP-MOVPE
• Resonant Raman Scattering in GaN/Al_0.15Ga_0.85N and In_yGa_1-yN/GaN/Al_xGa_1-xN Heterostructures
• Raman Scattering and Photoluminescence of Mg-Doped GaN Films Grown by Molecular-Beam Epitaxy
• High-Pressure Raman Scattering of Biaxially Strained GaN on GaAs
• Electron-Phonon Scattering in Very High Electric Fields
• Optical-Gain Measurements on GaN and Al_xGa_1-xN Heterostructures
• Optical Anisotropy of the Optical Response for Strained GaN Epilayers Grown Along the <10-10> Direction
• Electronic and Optical Properties of Bulk GaN and GaN/AlGaN Quantum-Well Structures
• X-ray Photoelectron Diffraction Measurements of Hexagonal GaN(0001) Thin Films
• A Chemical and Structural Study of the AlN-Si Interface
• Measurement of In_xGa_1-xN and Al_xGa_1-xN Compositions by RBS and SIMS
• Complete Characterization of Al_xGa_1-xN/In_xGa_1-xN/GaN Devices by SIMS
• TEM/HREM Analysis of Defects in GaN Epitaxial Layers Grown by MOVPE on SiC and Sapphire
• Luminescence Related to Stacking Faults in Heteroepitaxially Grown Wurtzite GaN
• Photoluminescence of Strain-Engineered MBE-Grown GaN and InGaN Quantum-Well Structures
• Characterization of Al_xGa_1-xN Films Prepared by Plasma- Induced Molecular-Beam Epitaxy on c-Plane Sapphire
• Influence of Free Charge on the Lattice Parameters of GaN and Other Semiconductors
• HREM and CBED Studies of Polarity of Nitride Layers With Prismatic Defects Grown Over SiC
• The Atomic Structure of the {10&onebar;10} Inversion Domains in GaN/Sapphire Layers
• Processing Challenges for GaN-Based Photonic and Electronic Devices
• Photoelectrochemical Etching of GaN
• Patterning of GaN in High-Density Cl₂- and BCl₃-Based Plasmas
• Etch Characteristics of GaN Using Inductively-Coupled Cl₂/HBr and Cl₂/Ar Plasmas
• Dry Etching of GaN Using Reactive Ion-Beam Etching and Chemically Assisted Reactive Ion-Beam Etching
• Development of GaN and InGaN Gratings by Dry Etching
• Plasma Damage Effects in InAlN Field-Effect Transistors
• ICP Dry Etching of III-V Nitrides
• Implantation Activation Annealing of Si-Implanted Gallium Nitride at Temperatures >1100°ree;C
• Recovery of Structural Defects in GaN After Heavy Ion Implantation
• Current Transport in W and WSi_x Ohmic Contacts to InGaN and InN
• Temperature Behavior of Pt/Au Ohmic Contacts to p-GaN
• Low Resistance Contacts to p-Type GaN
• Phase Formation and Morphology in Nickel and Nickel/Gold Contacts to Gallium Nitride
• Electron Field Emission From Aluminum Nitride
• Valence Band Physics in Wurtzite GaN
• Comparison of Electron and Hole Initiated Impact Ionization in Zinc Blende and Wurtzite Phase Gallium Nitride
• Molecular-Dynamics Simulation of Transport in Diamond and GaN: Role of Collective Excitations
• Electrical and Optical Properties of InGaN/AlGaN Double Heterostructure Blue Light-Emitting Diodes
• Effect of Hydrogen Chloride on the Capacitance-Voltage Characteristics of MOCVD-Grown AlN/6H-SiC MIS Structures
• MOCVD Growth of High Output Power InGaN Multiple- Quantum-Well Light-Emitting Diode
• Theory of Gain in Group-III Nitride Lasers
• Growth and Characterization of Thermal Oxides on Gallium Nitride
• MOCVDGrowth of GaN on Bulk AlN Substrates

1998

• Selective etching of wide bandgap nitrides
• Selective Area Growth of GaN by MOVPE and HVPE
• Effects of substrate orientation on the valence band splittings and valence band offsets in GaN and AlN films
• Localized donors in GaN: spectroscopy using large pressures
• Atomic structure of grain boundaries and interfaces in III-nitrideis epitaxial systems
• Aging of InGaN/AlGaN/GaN Light-Emitting Diodes
• Multiwafer MOVPE of III-nitride\films for LED and laser applications
• Magnetoluminescence and resonant electronic Raman scattering investigation of donors and excitons in hydride VPE and MOCVD GaN,
• Atomic scale aluminum and strain distribution in a GaN/AlxGa1-xN heterostructure
• Thermal Expansion of AlN and GaN
• GaN and Related Materials for High Power Applications
• Wide Bandgap SemiconductorPower Devices
• applications of high power electronic switches in the electric power utility industry and the needs for high power switching devices
• Piezoelectric quantization in GaInN thin films and multiple quantum well structures
• 5. 5 kV bipolar diodes from high quality CVD 6H-SiC
• temperature dependence of breakdown field in p-π-n GaN diodes
• applications of high power electronic switches in the electric power utility industry and the needs for high power switching devices

2000

• Phonons and free carriers in a strained hexagonal GaN-AlN superlattice measured by Infrared Ellipsometry and Raman spectroscopy
• MICROSTRUCTURE AND THERMAL STABILITY OF TRANSITION METAL NITRIDES AND BORIDES ON GaN

2001

• Surface Segregation and Composition Fluctuations in Ammonia MBE and MOVPE of InGaN

last updated Thursday, February 14, 2002 1:54:02 PM.
© 2001 The Materials Research Society