Data for reference ponce-mrsbull-22-51

Defects and interfaces in GaN epitaxy

F. A. Ponce

MRS Bulletin 22(2), 51 (1997).

A review of the microstructure of MOCVD GaN thin films is presented.

This item is cited by the following items in the database:

  1. AVALANCHE BREAKDOWN LUMINESCENCE OF InGaN/AlGaN/GaN HETEROSTRUCTURES
  2. Surface Treatment and Layer Structure in 2H-GaN Grown on the (0001)Si surface of 6H-SiC by MBE
  3. Study of the Epitaxial Lateral Overgrowth (ELO) Process for GaN on Sapphire Using Scanning Electron Microscopy and Monochromatic Cathodoluminescence
  4. Mg-enhanced lateral overgrowth of GaN on patterned GaN/sapphire substrate by selective Metal Organic Vapor Phase Epitaxy
  5. Visible-Blind UV Digital Camera Based On a 32 x 32 Array of GaN/AlGaN p-i-n Photodiodes
  6. UV-Specific (320-365 nm) Digital Camera Based On a 128x128 Focal Plane Array of GaN/AlGaN p-i-n Photodiodes
  7. Compositional variation of AlGaN epitaxial films on 6H-SiC substrates determined by cathodoluminescence.

Contributed by Fernando A. Ponce from jumanji.parc.xerox.com. on Tuesday, March 25, 1997 1:11:21 PM

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