Data for reference nakamura-mrb-23-37

InGaN/GaN/AlGaN-based laser diodes with an estimated lifetime of longer than 10,000 hours (Reprinted from Materials Research Society Proceedings, vol 482, 1997),

S. Nakamura

Materials Research Bulletin 23, 37 (1998).

The Materials Research Society does not yet have permission from the copyright owner to make the abstract available.

This item is cited by the following items in the database:

  1. Electric Field Distribution in strained p-i-n GaN/InGaN multiple quantum well structures.
  2. Compositional variation of AlGaN epitaxial films on 6H-SiC substrates determined by cathodoluminescence.

Contributed by A submitted manuscript, on Thursday, August 26, 1999 5:12:45 PM
Modified by Masahiro Adachi from 160.15.14.204 on Friday, September 24, 2004 10:38:24 AM

If you are a registered user, and would like to help the journal improve its references database, you can help by adding data to the database. The author list may be incomplete; the abstract or title may be missing, and the list of references cited by the article is probably absent or incomplete.

MRS Internet Journal of Nitride Semiconductor Research

last updated Wednesday, April 27, 2005 5:47:45 PM.
© 1998 The Materials Research Society