Data for reference nakamura-microelj-25-651

Growth of InxGa(1-x)N compound semiconductors and high-power InGaN/AlGaN double heterostructure violet-light-emitting diodes

S. Nakamura

Microelectronics Journal 25, 651 (1994).

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This item is cited by the following items in the database:

  1. Temperature-Composition Dependence of the Bandgap and Possible Non-complanar Structures in GaN-AlN, GaN-InN and InN-AlN Mixed Crystals

Contributed by Andrej E. Nikolaev from shuttle.ioffe.rssi.ru. on Monday, June 17, 1996 8:42:29 AM

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