Data for reference marasina-kristtech-12-541

Preparation of InN epitaxial layers in InCl3-NH3 system

L. A. Marasina, I. G. Pichugin, M. Tlaczala

Kristall Technik 12, 541 (1977).

The Materials Research Society does not yet have permission from the copyright owner to make the abstract available.

This item is cited by the following items in the database:

  1. GaN, AlN, and InN: A review
  2. InN thin film growth using N2, NH3 and N2-He rf plasma
  3. Growth of InN at High Temperature by HVPE

Contributed by S. Strite

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