Data for reference chen-jvstb-18-2284

Surface structures and growth kinetics of InGaN(0001) grown by molecular beam epitaxy

H Chen, RM Feenstra, JE Northrup, T Zywietz, J Neugebauer, DW Greve

Journal of Vacuum Science and Technology B 18(4), 2284 (2000).

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This item cites the following items in the database:

  1. Scanning Tunneling Microscopy Studies of InGaN Growth by Molecular Beam Epitaxy

This item is cited by the following items in the database:

  1. Indium incorporation and surface segregation during InGaN growth by molecular beam epitaxy: experiment and theory
  2. Review of Structure of Bare and Adsorbate-Covered GaN(0001) Surfaces

Contributed by R. M. Feenstra from 128.2.24.220 on Friday, June 1, 2001 4:24:26 PM

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