Data for reference fu-jvstb-18-1467

Theoretical study of GaN molecular beam epitaxy growth using ammonia: A rate equation approach

Wenning Fu, Rama Venkat

Journal of Vacuum Science and Technology B 18(3), 1467 (2000).

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This item is cited by the following items in the database:

  1. Modeling GaN Growth by Plasma Assisted MBE in the Presence of Low Mg Flux
  2. Review of Structure of Bare and Adsorbate-Covered GaN(0001) Surfaces

Contributed by A submitted manuscript, on Thursday, August 16, 2001 2:47:46 PM

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